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HAT2022R
Silicon N Channel Power MOS FET High Speed Power Switching
REJ03G1158-1200 (Previous: ADE-208-440J) Rev.12.00 Sep 07, 2005
Features
* * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
5678 DDDD 65 87 12 34
4 G
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
SSS 123
Rev.12.00 Sep 07, 2005 page 1 of 6
HAT2022R
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 30 20 11 88 11 2.5 150
Unit V V A A A W C C
Pch Tch
Note 2
Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.012 0.017 18 1450 950 380 60 450 80 160 0.8 70 Max -- -- 10 10 2.0 0.015 0.025 -- -- -- -- -- -- -- -- 1.3 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 11 A, VGS = 0 IF = 11 A, VGS = 0 diF/dt = 20 A/s
Note 3
Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VGS = 10 V Note 3 ID = 6 A, VGS = 4 V ID = 6 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 6 A, VDD 10 V
Note 3
Note 3
Rev.12.00 Sep 07, 2005 page 2 of 6
HAT2022R
Main Characteristics
Power vs. Temperature Derating
4.0 100 Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 30
PW
Maximum Safe Operation Area
Pch (W)
ID (A)
1m
= 10
10 s
3.0
10 3
DC
s
100 s
Op
Channel Dissipation
er
at
2.0
Drain Current
(P W N 1 Operation in 1 ote 4 this area is 0 s) 0.3 limited by RDS (on)
ion
ms
1.0
0.1 0.03 Ta = 25C 1 shot Pulse 0.01 0.1 0.3 1
0
0
50
100
150
200
3
10
30
100
Ambient Temperature
Ta (C)
Drain to Source Voltage
VDS (V)
Note 4: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
50 10 V 6V 5V 4.5 V 30 3.5 V 4V 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
(A)
(A) ID Drain Current
40
Pulse Test
16
ID
12
Drain Current
20 3V 10 VGS = 2.5 V 0 0 2 4 6 8 10
8 25C Tc = 75C 4 -25C 0 0 1 2 3 4 5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
VDS (on) (V)
Pulse Test 0.4
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) ()
0.2 Pulse Test 0.1 0.05 VGS = 4 V
0.5
Drain to Source Voltage
0.3
0.02 0.01
0.2 ID = 10 A 0.1 5A 2A 0 0 2 4 6 8 10
10 V 0.005
0.002 0.5
1
2
5
10
20
50
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.12.00 Sep 07, 2005 page 3 of 6
HAT2022R
Static Drain to Source on State Resistance vs. Temperature
0.05 Pulse Test 0.04 ID = 2 A, 5 A, 10 A VGS = 4 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
50 Tc = -25C 20 10 5 75C 2 1 0.5 0.2 VDS = 10 V Pulse Test 0.5 1 2 5 10 20 25C
0.03
0.02
0.01 10 V 0 -40 0 40
2 A, 5 A, 10 A
80
120
160
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000 Ciss 1000 300 100 30 10 Coss Crss
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
500
100 50
20 10 5 0.2 di / dt = 20 A / s VGS = 0, Ta = 25C 0.5 1 2 5 10 20
Capacitance C (pF)
200
VGS = 0 f = 1 MHz 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 11 A VDD = 5 V 10 V 25 V VDS 20 VGS 8 16
Switching Characteristics
VGS (V)
20 1000 500 tr tf td(off) td(on)
50
40
Switching Time t (ns)
Drain to Source Voltage
30
12
Gate to Source Voltage
200 100 50
10
0 0 20
VDD = 25 V 10 V 5V 40 60 80
4
0 100
20 V = 4 V, V = 10 V GS DD PW = 3 s, duty 1 % 10 0.2 0.5 1 2
5
10
20
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.12.00 Sep 07, 2005 page 4 of 6
HAT2022R
Reverse Drain Current vs. Source to Drain Voltage
50
Reverse Drain Current IDR (A)
Pulse Test
40
30
5V
20
10
VGS = 0, -5 V
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.2
0.1
0.1
0.05
0.02 0.01
ch - f (t) = s (t) * ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM D= PW T 1m 10 m 100 m 1 10 100 1000 10000 PW T
0.01
0.001
o 1sh
0.0001 10
t pu
lse
100
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 4V
50
VDD = 10 V td(on)
90% tr
90% td(off) tf
Rev.12.00 Sep 07, 2005 page 5 of 6
HAT2022R
Package Dimensions
JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
*3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters Min Nom 4.90 3.95 Max 5.3
L1
D E A2 A1 A 0.10
0.14
0.25 1.75
A
bp b1
0.34
0.40
0.46
A1
c
0.15
0.20
0.25
L
c1 0 HE 5.80 6.10 1.27 0.25 0.1 0.75 0.40 0.60 1.08 1.27 8 6.20
y
Detail F
e x y Z L L1
Ordering Information
Part Name Quantity Shipping Container HAT2022R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.12.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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